| 发明名称 |
Method for manufacturing an interdigitated back contact solar cell |
| 摘要 |
A method for manufacturing an interdigitated back contact solar cell, comprising steps of: (a) providing a doped silicon substrate; (b) doping the rear surface of the substrate homogeneously with boron in a blanket pattern, thereby forming a p+ region on the rear surface of the silicon substrate; (c) forming a silicon dioxide layer on the front and rear surface; (d) depositing a phosphorus-containing doping paste on the rear surface in a second pattern; (e) heating the silicon substrate to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming an n+ region on the rear surface of the silicon substrate through the second pattern, wherein the p+ region and the n+ region on the rear surface collectively form an interdigitated pattern; and (f) removing the second silicon dioxide layer from the silicon substrate. |
| 申请公布号 |
US9246029(B2) |
申请公布日期 |
2016.01.26 |
| 申请号 |
US201514627350 |
申请日期 |
2015.02.20 |
| 申请人 |
E I DU PONT DE NEMOURS AND COMPANY |
发明人 |
Scardera Giuseppe;Poplavskyy Dmitry;Inns Daniel Aneurin;Bendimerad Karim Lotfi;Dugan Shannon |
| 分类号 |
H01L21/00;H01L31/0224;H01L31/18;H01L31/068;H01L31/02 |
主分类号 |
H01L21/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing an interdigitated back contact solar cell, comprising steps of:
(a) providing a doped silicon substrate, the substrate comprising a front, sunward facing, surface and a rear surface; (b) doping the rear surface of the substrate homogeneously with boron in a first pattern, thereby forming a p+ region on the rear surface of the silicon substrate, wherein the first pattern is a blanket pattern; (c) forming a silicon dioxide layer on the front surface and the rear surface; (d) depositing a phosphorus-containing doping paste on the rear surface in a second pattern, wherein the phosphorus-containing doping paste comprising a phosphorus compound and a solvent; (e) heating the silicon substrate in an ambient to a temperature and for a time period in order to locally diffuse phosphorus into the rear surface of the silicon substrate, thereby forming an n+ region on the rear surface of the silicon substrate through the second pattern, wherein the p+ region and the n+ region on the rear surface collectively form an interdigitated pattern; and (f) removing the silicon dioxide layer from the silicon substrate. |
| 地址 |
Wilmington DE US |
