发明名称 |
Back contact for photovoltaic devices such as copper-indium-diselenide solar cells |
摘要 |
A photovoltaic device (e.g., solar cell) includes: a front substrate (e.g., glass substrate); a semiconductor absorber film; a back contact including a first conductive layer of or including copper (Cu) and a second conductive layer of or including molybdenum (Mo); and a rear substrate (e.g., glass substrate). The first conductive layer of or including copper is located between at least the rear substrate and the second conductive layer of or including molybdenum, and wherein the semiconductor absorber film is located between at least the back contact and the front substrate. |
申请公布号 |
US9246025(B2) |
申请公布日期 |
2016.01.26 |
申请号 |
US201213455232 |
申请日期 |
2012.04.25 |
申请人 |
Guardian Industries Corp. |
发明人 |
Krasnov Alexey;den Boer Willem |
分类号 |
H01L31/0224;H01L31/0392;H01L31/0749;H01L31/18 |
主分类号 |
H01L31/0224 |
代理机构 |
Nixon & Vanderhye P.C. |
代理人 |
Nixon & Vanderhye P.C. |
主权项 |
1. A photovoltaic device, comprising:
a front substrate; a semiconductor absorber film; a back contact comprising a first conductive layer comprising copper and a second conductive layer comprising molybdenum; a rear substrate; wherein the first conductive layer comprising copper is located between at least the rear substrate and the second conductive layer comprising molybdenum, and wherein the semiconductor absorber film is located between at least the back contact and the front substrate; and a stress mitigating layer disposed between the first conductive layer of the back contact and the second conductive layer of the back contact, said stress mitigating layer comprising an alloy of copper and molybdenum. |
地址 |
Auburn Hills MI US |