Photovoltaic device with aluminum plated back surface field and method of forming same

摘要

A photovoltaic device is provided that includes a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other. A plurality of patterned antireflective coating layers is located on a p-type semiconductor surface of the semiconductor substrate, wherein at least one portion of the p-type semiconductor surface of the semiconductor substrate is exposed. Aluminum is located directly on the at least one portion of the p-type semiconductor surface of the semiconductor substrate that is exposed.

主权项

1. A photovoltaic device comprising:
a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type semiconductor portion one on top of the other; a plurality of patterned antireflective coating layers located on a p-type semiconductor surface of the semiconductor substrate, wherein at least one portion of the p-type semiconductor surface of the semiconductor substrate is exposed; an aluminum layer located on at least one portion of the p-type semiconductor surface of the semiconductor surface that is exposed; and one or more metal layers in direct physical contact with a portion of said plurality of said patterned antireflective coating layers and in direct physical contact with an entire surface of said aluminum layer, wherein at least one portion of said plurality of said patterned antireflective coating layers are exposed.