Recrystallization of source and drain blocks from above

摘要

A method for manufacturing a transistor is provided, including amorphization and doping, by one or more localized implantations, of given regions of source and drain blocks based on crystalline semi-conductor material disposed on an insulating layer of a semi-conductor on insulator substrate, the implantations being carried out so as to conserve at a surface of said blocks zones of crystalline semi-conductor material on regions of amorphous semi-conductor material; and recrystallization of at least one portion of said given regions.

主权项

1. A method for forming a transistor on a semi-conductor on insulator type substrate, comprising:
a) rendering amorphous, regions of blocks of crystalline semi-conductor material disposed on an insulating layer of the substrate, by a plurality of localised implantations, forming source and drain blocks arranged on either side of a zone corresponding to a channel region of the transistor,
the plurality of implantations being carried out so as to keep at surface regions of said blocks a thickness of crystalline semi-conductor material on said rendered amorphous regions,the rendering being carried out by the plurality of implantations comprising doping steps, in the following order or in the opposite order:
a first implantation by a non-doping species, which renders amorphous at least one portion of said regions under the surface regions, andanother implantation by a doping species, which carries out an N-type doping or a P-type doping of said at least one portion of said regions under the surface regions, said another implantation being carried out at a temperature greater than a critical temperature above which said surface regions are not rendered amorphous by said another implantation; and b) recrystallizing and activation annealing of the doped said at least one portion of said regions under the surface regions.