发明名称 |
Method for manufacturing semiconductor device |
摘要 |
An embodiment of the disclosed invention is a method for manufacturing a semiconductor device, which includes the steps of: forming a first insulating film; performing oxygen doping treatment on the first insulating film to supply oxygen to the first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film electrically connected to the source electrode and the drain electrode, over the first insulating film; performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film; forming a second insulating film over the oxide semiconductor film; and forming a gate electrode in a region overlapping with the oxide semiconductor film, over the second insulating film. The manufacturing method allows the formation of a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability. |
申请公布号 |
US9245983(B2) |
申请公布日期 |
2016.01.26 |
申请号 |
US201514741547 |
申请日期 |
2015.06.17 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
Yamazaki Shunpei |
分类号 |
H01L21/02;H01L29/66;H01L29/786;H01L21/465;H01L21/477;H01L21/4757;H01L21/441;H01L27/12 |
主分类号 |
H01L21/02 |
代理机构 |
Fish & Richardson P.C. |
代理人 |
Fish & Richardson P.C. |
主权项 |
1. A method for manufacturing a semiconductor device, the method comprising:
forming a first insulating film over a single crystal semiconductor substrate; forming an oxide semiconductor film over the first insulating film; heating the oxide semiconductor film in an inert gas and then in a gas containing oxygen; processing the heated oxide semiconductor film with a dry etching or a wet etching; and heating the processed oxide semiconductor film in an inert gas. |
地址 |
Atsugi-shi, Kanagawa-ken JP |