SOLUTION FOR ETCHING SILICON OXIDE LAYER

摘要

The present invention relates to an etchant for a silicon oxide film. The etchant for a silicon oxide film of the present invention can selectively etch the silicon oxide film without damage of metal films when etching the silicon oxide film comprising one or more metal films by using a nitrogen-containing heterocyclic compound as a metal film corrosion inhibitor. Therefore, the etchant can be helpfully used in producing various semiconductor device.