SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

A semiconductor memory device according to the embodiment of the present invention includes first and second cell strings connected to each of first and second word line groups. The operation method of the semiconductor memory device includes: forming a channel on the second cell string by applying a pass voltage to the second word line group; reflecting data of a memory cell connected to a selected word line of the first word line group among memory cells of the first cell strings to the channel of the second cell string through a bit line; and determining the data of the memory cell connected to the selected word line by sensing the charges of the second cell string through the bit line.