LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE SAME AND LIGHTING SYSTEM

摘要

A light emitting device according to an embodiment includes: a first conductivity type semiconductor layer; an active layer on the first conductivity type semiconductor layer; an electron blocking layer on the active layer; a second conductivity type semiconductor layer on the electron blocking layer; and a current diffusion layer doped with carbon in the first conductivity type semiconductor layer. The thickness of the current diffusion layer is 0.5nm to 10nm. The doping concentration of the carbon is 1.0 x 10^16 Atoms/cm^3 to 1.0 x 10^ 18 Atoms/cm^3. A light emitting device according to an embodiment has high ESD yield and improves reliability and luminous efficiency.