发明名称 METHOD OF DAMAGE-FREE IMPURITY DOPING FOR CMOS IMAGE SENSORS CMOS
摘要 A method of fabricating a backside-illuminated pixel. The method includes forming frontside components of the pixel on or in a front side of a substrate, the frontside components including a photosensitive region of a first polarity. The method further includes forming a pure dopant region of a second polarity on a back side of the substrate, applying a laser pulse to the backside of the substrate to melt the pure dopant region, and recrystallizing the pure dopant region to form a backside doped layer. Corresponding apparatus embodiments are disclosed and claimed.
申请公布号 HK1170844(A1) 申请公布日期 2016.01.22
申请号 HK20120111383 申请日期 2012.11.09
申请人 OMNIVISION TECHNOLOGIES INC. 发明人 KEH-CHIANG KU;CHIA-YING LIU;HSIN-CHIH TAI;VINCENT VENEZIA V
分类号 H01L 主分类号 H01L
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