SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a fin structure disposed on a substrate, and extending in a first direction; a sacrificial layer pattern disposed on the fin structure in the first direction to be separated; an active layer pattern extended on the sacrificial layer pattern in the first direction; a gate structure extended on the active layer pattern in the second direction crossing the first direction; and an oxidative layer pattern arranged on the lower part of the gate structure, and arranged between the separated sacrificial layer pattern. Provided is a semiconductor device having improved operation properties.