THE MANUFACTURING METHOD OF FIELD OXIDE FOR APPLICATION TO HIGH VOLTAGE DEVICE

摘要

The present invention relates to a method to manufacture a field oxide of a high voltage device. The method includes the steps of: forming an align key in an upper part of a substrate; doping and activating a dopant through the align key; forming a field oxide in the upper part of the substrate; etching the field oxide; and forming a contact via and an electrode in an etching area of the field oxide. The field oxide is formed through the following steps: manufacturing a silicon dioxide solution by mixing a silicon nanoparticle and a silicon dioxide precursor with a solvent; coating the substrate with the silicon dioxide solution; and heating the substrate. Therefore, safety of workers is ensured from high temperatures and gas by coating the substrate with the field oxide through a low temperature process, and transformation and characteristic degradation of the substrate are prevented.