Carbon and/or Nitrogen Incorporation in Silicon Based Films Using Silicon Precursors With Organic Co-Reactants by PE-ALD

摘要

Methods for the deposition of a silicon-containing film using an organic reactant, a silicon precursor and a plasma.

主权项

1. A method of depositing a film on a substrate, the method comprising:
exposing at least a portion of the substrate to a silicon-containing precursor to form a silicon-containing film; exposing the silicon-containing film to an organic reactant to form one or more of a silicon-carbon film or a silicon-boron film; and exposing one or more of the silicon-containing film or the silicon-carbon film or the silicon-boron film to a plasma.