| 发明名称 |
RESISTIVE MEMORY DEVICE, RESISTIVE MEMORY SYSTEM, AND METHOD OF OPERATING RESISTIVE MEMORY DEVICE |
| 摘要 |
A resistive memory device includes a memory cell array including a plurality vertically stacked layers having one layer designated as an interference-free layer and another layer designated as an access prohibited layer, wherein the interference-free layer and the access prohibited layer share a connection with at least one signal line and access operations directed to memory cells the access prohibited layer are prohibited. |
| 申请公布号 |
US2016019951(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201514665127 |
申请日期 |
2015.03.23 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK HYUN-KOOK;BYEON DAE-SEOK;LEE YEONG-TAEK;KIM BO-GEUN;LEE YONG-KYU;KWON HYO-JIN |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistive memory device comprising:
a memory cell array comprising a plurality vertically stacked layers including one layer designated as an interference-free layer and another layer designated as an access prohibited layer, wherein the interference-free layer and the access prohibited layer share a connection with at least one signal line, and access operations directed to memory cells disposed in the access prohibited layer are prohibited. |
| 地址 |
SUWON-SI KR |
