发明名称 |
THERMAL UNIFORMITY COMPENSATING METHOD AND APPARATUS |
摘要 |
The invention provides a thermal uniformity compensating method and apparatus. The steps of the method includes: respectively measuring a plurality of first resistances of a plurality of hot spot patterns of a chip over an hot spot effect, wherein a plurality of pattern densities of the hot spot patterns are different; respectively measuring a plurality of second resistances of each of the hot spot patterns of the chip by a plurality of test keys over the hot spot effect, wherein a plurality of distances between the test keys and the corresponding hot spot pattern are different; establishing a look-up information according to the first and second resistances; analyzing a layout data of the chip for obtaining a pattern density information; and generating a calibrated layout data according to the pattern density information and the look-up information. |
申请公布号 |
US2016019330(A1) |
申请公布日期 |
2016.01.21 |
申请号 |
US201414333919 |
申请日期 |
2014.07.17 |
申请人 |
United Microelectronics Corp. |
发明人 |
Chang Chun-Ming;Liao Wen-Jung;Lee Chen-Wei;Hou Chun-Liang |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
1. A thermal uniformity compensating method for a chip, comprising:
disposing a plurality of hot spot patterns and test keys in the chip on a semiconductor wafer; respectively measuring a plurality of first resistances of the hot spot patterns of the chip by the test keys over a hot spot effect, wherein a plurality of pattern densities of the hot spot patterns are different; respectively measuring a plurality of second resistances of each of the hot spot patterns of the chip by the test keys over the hot spot effect, wherein a plurality of distances between the test keys and the corresponding hot spot pattern are different; establishing a look-up information according to the first and second resistances, wherein the look-up information is established based on the pattern densities and the distances, and used for looking-up to obtain a plurality of resistance variations; analyzing a layout data of the chip for obtaining a pattern density information; and generating a calibrated layout data according to the pattern density information and the look-up information. |
地址 |
Hsinchu TW |