TUNNEL FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

A tunnel field effect transistor (TFET), comprising: a first doping-type substrate (10); a channel (70) protruded from the middle of the first doping-type substrate; a source area (20) provided on the first doping-type substrate around the channel; an epitaxial layer (30) provided in the source region around the channel; a gate dielectric layer (40) provided on the epitaxial layer around the channel; a gate electrode region (50) provided around the gate dielectric layer; and a drain region (60) provided at the end portion of the channel away from the substrate. The TFET has higher drive current, a steep subthreshold amplitude, small leakage current and high chip integration density.