| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of suppressing a leak current generated during a program operation and performing highly reliable programming.SOLUTION: A flash memory of the present invention has a memory array in which a plurality of NAND type strings are formed. Gates of a plurality of memory cells in a row direction of the plurality of strings are connected in common to a word line; gates of a plurality of bit line selection transistors are connected in common to a selection gate line SGD; and gates of a plurality of source line selection transistors are connected in common to a selection gate line SGS. An interval S4 between gates of the selection gate line SGS and a word line WL0 adjacent thereto is larger than an interval S1 between gates of the selection gate line SGD and a word line WL7 adjacent thereto. |
