| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element suppressed in degradation of productivity and capable of achieving higher-speed modulation.SOLUTION: There is disclosed a semiconductor laser having an anode wiring and a cathode wiring which do not damage high frequency characteristics. The semiconductor laser element includes: a body 2 including short sides 2a, 2b facing each other and long sides 2c, 2d facing each other; an active layer 3 having a direction of optical output along an extending direction of the short sides 2a, 2b; an electrode 5 supplying a bias signal to the active layer 3; an electrode pad 10 provided on the primary surface 12; a first wiring 7 for connecting the anode electrode 5 and the electrode pad 10 to each other; and a second wiring 8 connecting the electrode pad 10 and an electrode pad 11 and having a width narrower than widths of the electrode pads 10, 11. The active layer 3, the electrode pad 10 and the electrode pad 11 are successively arranged along the long sides 2c, 2d. |
