发明名称 |
NON-VOLATILE ONE-TIME PROGRAMMABLE MEMORY DEVICE |
摘要 |
An apparatus includes a metal gate, a substrate material, and an oxide layer between the metal gate and the substrate material. The oxide layer includes a hafnium oxide layer contacting the metal gate and a silicon dioxide layer contacting the substrate material and contacting the hafnium oxide layer. The metal gate, the substrate material, and the oxide layer are included in a one-time programmable (OTP) memory device. The OTP memory device includes a transistor. A non-volatile state of the OTP memory device is based on a threshold voltage shift of the OTP memory device. |
申请公布号 |
WO2016010699(A1) |
申请公布日期 |
2016.01.21 |
申请号 |
WO2015US37529 |
申请日期 |
2015.06.24 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
LI, XIA;XU, JEFFREY JUNHAO;LU, XIAO;YANG, BIN;YUAN, JUN;CHEN, XIAONAN;WANG, ZHONGZE |
分类号 |
H01L27/112;H01L29/423;H01L29/51;H01L29/792 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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