发明名称 METHOD FOR CLEANING DEPOSITION FILM FORMATION DEVICE, AND METHOD OF MASS-PRODUCING SEMICONDUCTOR DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method for cleaning that achieves stable continuation of both a cleaning speed and a discharge, protects the power source,and also prevents damage to a member in a device.SOLUTION: There is provided a method for cleaning a deposition film formation device in which the inside of a reaction container is cleaned after a deposition film is formed, the method including a first cleaning process, a cleaning condition change process, and a second cleaning process in this order. In the first cleaning process, a value of a voltage and a value of a current are measured, the cleaning condition change process is a process of changing cleaning conditions on the basis of conductance calculated from the values measured in the first cleaning process, and the second cleaning process is a process of cleaning under cleaning conditions having been changed in the cleaning condition change process, the voltage having only the negative polarity in the first cleaning process and both the polarities in the second cleaning process.
申请公布号 JP2016011452(A) 申请公布日期 2016.01.21
申请号 JP20140134890 申请日期 2014.06.30
申请人 CANON INC 发明人 AOKI MAKOTO;HOSOI KAZUTO;OYAMA KAZUNARI;TAZAWA DAISUKE;KOJIMA YASUO
分类号 C23C16/44;C23C16/24;G03G5/08 主分类号 C23C16/44
代理机构 代理人
主权项
地址