| 发明名称 |
TWO STEP TRANSPARENT CONDUCTIVE FILM DEPOSITION METHOD AND GAN NANOWIRE DEVICES MADE BY THE METHOD |
| 摘要 |
A method of making a semiconductor device includes depositing a first transparent conductive film (TCF) contact layer on a sidewall of a III-nitride semiconductor nanostructure by evaporation, and depositing a second TCF contact layer over the first TCF contact layer by sputtering or chemical vapor deposition (CVD). |
| 申请公布号 |
US2016020364(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201414772353 |
申请日期 |
2014.03.12 |
| 申请人 |
GLO AB |
发明人 |
HERNER Scott Brad |
| 分类号 |
H01L33/42;H01L33/62;H01L33/06;H01L33/00;H01L33/32 |
主分类号 |
H01L33/42 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a semiconductor device, comprising:
depositing a first transparent conductive film (TCF) contact layer on a sidewall of a III-nitride semiconductor nanostructure by evaporation; and depositing a second TCF contact layer over the first TCF contact layer by sputtering or chemical vapor deposition (CVD). |
| 地址 |
Lund SE |
