发明名称 APPLICATIONS FOR NANOPILLAR STRUCTURES
摘要 A disclosed method of fabricating a hybrid nanopillar device includes forming a mask on a substrate and a layer of nanoclusters on the hard mask. The hard mask is then etched to transfer a pattern formed by the first layer of nanoclusters into a first region of the hard mask. A second nanocluster layer is formed on the substrate. A second region of the hard mask overlying a second region of the substrate is etched to create a second pattern in the hard mask. The substrate is then etched through the hard mask to form a first set of nanopillars in the first region of the substrate and a second set of nanopillars in the second region of the substrate. By varying the nanocluster deposition steps between the first and second layers of nanoclusters, the first and second sets of nanopillars will exhibit different characteristics.
申请公布号 US2016020278(A1) 申请公布日期 2016.01.21
申请号 US201514595851 申请日期 2015.01.13
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 HALL MARK D.;SHROFF MEHUL D.
分类号 H01L29/06;H01L43/02;G01N33/00;H01L41/113;G02B6/10;G02B6/126;H01L33/18;B81B1/00 主分类号 H01L29/06
代理机构 代理人
主权项
地址 Austin TX US