SEMICONDUCTOR DEVICE

摘要

To enhance electromigration resistance of an electrode.;A drain electrode is partially formed on a side surface of a drain pad. In this case, the drain electrode is integrated with the drain pad and extends from the side surface of the drain pad in a first direction (y direction). A recessed portion is located in a region overlapping with the drain electrode in a plan view. At least a part of the drain electrode is buried in the recessed portion. A side surface of the recessed portion, which faces the drain pad, enters the drain pad in the first direction (y direction).

主权项

1. A semiconductor device comprising:
a nitride semiconductor layer; an interlayer insulating film located over the nitride semiconductor layer; a wiring located over the interlayer insulating film; an electrode which is integrated with the wiring and is partially formed on a first side surface of the wiring and which extends from the first side surface in a first direction in a plan view; a recessed portion which is located in a region overlapping with the electrode in a plan view and is formed in the interlayer insulating film, a lower end of the recessed portion reaching the nitride semiconductor layer, at least a part of the electrode being buried in the recessed portion; and a barrier metal film formed along a bottom surface and side surfaces of the recessed portion, a bottom surface of the wiring, and a bottom surface of the electrode, wherein the wiring and the electrode contains aluminum, the barrier metal film contains titanium, and a side surface of the recessed portion, which faces the wiring, reaches the first side surface of the wiring or enters the wiring, in the first direction.