| 发明名称 |
COMPUTER IMPLEMENTED METHOD FOR CALCULATING A CHARGE DENSITY AT A GATE INTERFACE OF A DOUBLE GATE TRANSISTOR |
| 摘要 |
A computer implemented method for calculating a charge density q1 of a first gate of a double gate transistor comprising a thin body with a first and a second gate interface, the method including determining, using a physical processor, an initial estimate q1,init of the charge density of the first gate; performing, using the physical processor, at least two basic corrections of the initial estimate based on a Taylor development of a function fzero(q1) able to be nullified by a correct value of the charge density q1 of the first gate. |
| 申请公布号 |
US2016019327(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201414332907 |
申请日期 |
2014.07.16 |
| 申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES |
发明人 |
POIROUX Thierry;JAUD Marie-Anne;MARTINIE Sebastien;ROZEAU Olivier |
| 分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A computer implemented method for calculating a charge density q1 of a first gate of a double gate transistor comprising a thin body with a first and a second gate interface, the method comprising:
determining, using a physical processor, an initial estimate q1,init of the charge density of the first gate; performing, using the physical processor, at least two corrections of the initial estimate based on a Taylor development of a function fzero(q1) that is nullifiable by a correct value of the charge density q1 of the first gate to determine a corrected value of the charge density q1 of the first gate of the double gate transistor. |
| 地址 |
Paris FR |
