SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

A semiconductor light emitting device according to the embodiment of the present invention includes a base layer made of a first conductivity type semiconductor, a mask layer which is arranged on the base layer and has opening parts for exposing part of the base layer, and nano-light emitting structures which are arranged on the opening part and include a first conductivity type semiconductor core, an active layer and a second conductivity type semiconductor core, respectively. The nano-light emitting structures include a body part of a pillar shape on the mask layer and an upper end part of a cone shape arranged on the body part. In the nano-light emitting structures, the rate of arranging the apex of the upper end part within a distance of 1.5% of the width of the body from the central vertical axis of the body part is 60% or more.