发明名称 METHOD FOR CLEANING DEPOSITION FILM FORMATION DEVICE, AND METHOD OF MASS-PRODUCING SEMICONDUCTOR DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a method for cleaning a film deposition device that achieves stable continuation of both a cleaning speed and a discharge, protects a power source, and also prevents damage to a member in the device.SOLUTION: There is provided a method for cleaning a deposition film formation device that cleans the inside of a reaction container by introducing a cleaning gas into the reaction container after forming a deposition film on a base substrate, applying a periodically changing voltage between a discharge electrode and a counter electrode from a power source connected to the discharge electrode, and decomposing the cleaning gas so as to clean the inside of the reaction container. The method for cleaning includes a first cleaning process S224, a cleaning condition change process S225 before a voltage value becomes unstable, and a second cleaning process in this order, and the voltage has the negative polarity based upon the potential of the counter electrode in the first cleaning process and both the polarities in the second cleaning process.
申请公布号 JP2016011455(A) 申请公布日期 2016.01.21
申请号 JP20140134893 申请日期 2014.06.30
申请人 CANON INC 发明人 AOKI MAKOTO;HOSOI KAZUTO;OYAMA KAZUNARI;TAZAWA DAISUKE;KOJIMA YASUO
分类号 C23C16/44;C23C16/24;C23C16/509;G03G5/08;H01L21/205 主分类号 C23C16/44
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