COMPACT DISTRIBUTED BRAGG REFLECTORS

摘要

Ultra compact DBRs, VCSELs incorporating the DBRs and methods for making the DBRs are provided. The DBRs are composed of a vertical reflector stack comprising a plurality of adjacent layer pairs, wherein each layer pair includes a layer of single-crystalline Group IV semiconductor and an adjacent layer of silicon dioxide.

主权项

1. A distributed Bragg reflector comprising:
a reflector stack comprising at least two adjacent layer pairs, each layer pair comprising:
a layer of a single-crystalline Group IV semiconductor; andan adjacent layer of silicon dioxide; wherein the thickness of the reflector stack is no greater than 1 μm and the root mean square roughness at the interfaces between the layers of single-crystalline Group IV semiconductor and the layers of silicon dioxide is no greater than 0.5 nm.