| 主权项 |
1. A voltage sensor configured for a voltage controlled interface of a plasma processing system, wherein the voltage sensor is configured to receive a radio frequency (RF) signal generated by a pickup device, and wherein the received RF signal is indicative of a RF voltage provided at a substrate in a plasma chamber, the voltage sensor comprising:
a first divider corresponding to a first channel and having a first capacitance ratio, wherein the first divider is configured to receive the RF signal generated by the pickup device, wherein the first divider generates a first reduced voltage signal; a second divider corresponding to a second channel and having a second capacitance ratio, wherein the second divider is configured to receive the RF signal generated by the pickup device, and wherein the second divider generates a second reduced voltage signal; a first output of the first channel configured to output a first output signal based on the first reduced voltage signal and while the received RF signal is in a first voltage range; and a second output of the second channel configured to output a second output signal based on the second reduced voltage signal and while the received RF signal is in a second voltage range, wherein the second voltage range is different than the first voltage range. |
