| 发明名称 |
CMP SLURRY COMPOSITION FOR POLISHING COPPER, AND POLISHING METHOD USING SAME |
| 摘要 |
The present invention relates to a CMP slurry composition for polishing copper, comprising: polishing particles; a complexing agent; a corrosion inhibitor; and deionized water. The complexing agent comprises one or more organic acids selected from oxalic acid, malic acid, malonic acid, and formic acid, and glycine. |
| 申请公布号 |
US2016017181(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201314758428 |
申请日期 |
2013.06.21 |
| 申请人 |
CHEIL INDUSTRIES INC. |
发明人 |
NOH Jong Il;KANG Dong Hun;KIM Tae Wan;JEONG Jeong Hwan;CHOI Young Nam;HONG Chang Ki |
| 分类号 |
C09G1/02 |
主分类号 |
C09G1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A CMP slurry composition for polishing copper, the CMP slurry composition comprising:
polishing particles, an oxidant, a complexing agent, a corrosion inhibitor, and deionized water, wherein: the complexing agent includes glycine and at least one organic acid selected from oxalic acid, malic acid, malonic acid, and formic acid; and a weight ratio of the organic acid to glycine ranges from about 1:13 to about 1:260. |
| 地址 |
Gumi-si Gyeongsangbuk-do KR |
