| 发明名称 |
HETERO-INTEGRATION OF III-N MATERIAL ON SILICON |
| 摘要 |
A hetero-integrated device includes a monocrystalline Si substrate and a trench formed in the substrate to expose a crystal surface at a bottom of the trench. Sidewall dielectric spacers are formed on sidewalls of the trench, and a III-V material layer is formed on the crystal surface at the bottom of the trench and is isolated from the sidewalls of the trench by the sidewall dielectric spacers. |
| 申请公布号 |
US2016020283(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201514796730 |
申请日期 |
2015.07.10 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Bayram Can;D'Emic Christopher P.;Kim Jeehwan;Sadana Devendra K. |
| 分类号 |
H01L29/20;H01L21/02;H01L21/302;H01L29/04;H01L29/06 |
主分类号 |
H01L29/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A hetero-integrated device, comprising:
a monocrystalline Si substrate; a trench formed in the substrate to expose a crystal surface at a bottom of the trench; sidewall dielectric spacers formed on sidewalls of the trench; and at least one III-V material layer formed on the crystal surface at the bottom of the trench and isolated from the sidewalls of the trench by the sidewall dielectric spacers. |
| 地址 |
Armonk NY US |
