METHOD FOR FABRICATING CMOS IMAGE SENSORS AND SURFACE TREATING PROCESS THEREOF

摘要

The present invention provides a method for fabricating a CMOS image sensor including a plurality of steps. Firstly, a substrate is provided. Then, a pixel region covering most of the substrate and a logic circuit region on a periphery of the substrate are formed. After that, at least one trench is formed in the pixel region. Next, a deposition process is performed to fill the at least one trench and cover the pixel region. Then, a planarization process is performed to expose a surface of the pixel region. A first treatment on the exposed surface of the pixel region is next performed by applying a first cleaning solution including hydrogen fluoride (HF) and ethylene glycol (EG). Besides, an amount of HF is lesser than that of EG.

主权项

1. A method for fabricating a CMOS image sensor, comprising steps of:
providing a substrate; defining a pixel region covering most of said substrate and defining a logic circuit region on a periphery of said substrate; forming at least one trench in said pixel region; performing a deposition process to fill said at least one trench and cover said pixel region; performing a planarization process to expose a surface of said pixel region; and performing a first treatment on said exposed surface of said pixel region by applying a first cleaning solution comprising hydrogen fluoride (HF) and ethylene glycol (EG), wherein an amount of HF is lesser than that of EG.