| 发明名称 |
SOLID STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
According to one embodiment, a solid state imaging device includes a semiconductor layer and an anti-reflection film. The semiconductor layer performs photoelectric conversion. The anti-reflection film is provided on the semiconductor layer. The anti-reflection film is conductive. |
| 申请公布号 |
US2016020232(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201514797257 |
申请日期 |
2015.07.13 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
FUKUMIZU Hiroyuki;IKARIYAMA Rikyu |
| 分类号 |
H01L27/146;G02B1/113;G02B1/16 |
主分类号 |
H01L27/146 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A solid state imaging device, comprising:
a semiconductor layer performing photoelectric conversion; and an anti-reflection film provided on the semiconductor layer, the anti-reflection film being conductive. |
| 地址 |
Tokyo JP |
