| 摘要 |
A power MOSFET having a trench gate, of the present invention, comprises: an N+ substrate; an N- epitaxial layer formed on the N+ substrate; a P- body layer including a P+ body formed on the N- epitaxial layer; an N+ source area formed within a part of the P- body layer; a trench penetrating the N+ source area and the P- body layer so as to reach the N- epitaxial layer; a gate insulation film and a gate electrode formed within the trench; a source electrode connected to the N+ source area; and an insulation film formed on the gate electrode so as to separate the gate electrode and the source electrode, wherein the trench has a curvature diameter of a predetermined value or more at a corner part meeting the N+ source area and a corner part of a bottom of the trench. |
