NITRIDE BASED LIGHT EMITTING DEVICE COMPRISING NANO PARTICLE LAYER

摘要

The present invention relates to a nitride semiconductor light emitting device comprising a nanoparticle layer. More particularly, the present invention relates to a nitride semiconductor light emitting device where a nanoparticle layer is interposed between a substrate and a phosphor layer. According to an embodiment of the present invention, the nitride semiconductor light emitting device can improve luminous efficiency by using a nanoparticle included in the nanoparticle layer interposed between the substrate and the phosphor layer as a scattering point to increase the amount of light emitted from a light emitting structure. Also, the nitride semiconductor light emitting device can improve the heat radiation efficiency of the light emitting device by the heat dissipation of the nanoparticle.