发明名称 STORAGE SYSTEM MANAGING RUN-TIME BAD CELLS
摘要 A storage system according to the embodiment of the present invention includes a storage device which includes a nonvolatile memory and a device memory and requires a test for the device memory; and a host which receives a memory test request from the storage device, executes a test for the device memory, and stores a test result in the nonvolatile memory. According to the present invention, because a memory is tested according to the memory test request of the storage device, a run-time bad cell generated in using products can be fined out and managed without the deterioration of a storage system.
申请公布号 KR20160007988(A) 申请公布日期 2016.01.21
申请号 KR20140087001 申请日期 2014.07.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MUN, KUI YON;PARK, JAE GEUN;YOO, YOUNG KWANG;CHUNG, BI WOONG
分类号 G11C29/04;G11C16/02 主分类号 G11C29/04
代理机构 代理人
主权项
地址