发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device.SOLUTION: A semiconductor device of one embodiment comprises an element separation region STI which extends in an X direction and has a cross region R1 crossing a memory gate electrode MG which extends in a Y direction orthogonal to the X direction in plan view. Here, in the cross region R1, a width ES1 in the Y direction of one end edge located on a source region SR side is larger than a width ES2 in the Y direction of the other end edge located on a control gate electrode side. |
申请公布号 |
JP2016012674(A) |
申请公布日期 |
2016.01.21 |
申请号 |
JP20140133852 |
申请日期 |
2014.06.30 |
申请人 |
RENESAS ELECTRONICS CORP |
发明人 |
OGATA HIROSHI;KAWASHIMA YOSHIYUKI;CHAGIHARA HIROSHI;HAYASHI TSUNEHIRO |
分类号 |
H01L21/336;H01L21/76;H01L21/8234;H01L21/8247;H01L27/08;H01L27/088;H01L27/10;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|