发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device.SOLUTION: A semiconductor device of one embodiment comprises an element separation region STI which extends in an X direction and has a cross region R1 crossing a memory gate electrode MG which extends in a Y direction orthogonal to the X direction in plan view. Here, in the cross region R1, a width ES1 in the Y direction of one end edge located on a source region SR side is larger than a width ES2 in the Y direction of the other end edge located on a control gate electrode side.
申请公布号 JP2016012674(A) 申请公布日期 2016.01.21
申请号 JP20140133852 申请日期 2014.06.30
申请人 RENESAS ELECTRONICS CORP 发明人 OGATA HIROSHI;KAWASHIMA YOSHIYUKI;CHAGIHARA HIROSHI;HAYASHI TSUNEHIRO
分类号 H01L21/336;H01L21/76;H01L21/8234;H01L21/8247;H01L27/08;H01L27/088;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/336
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