发明名称 SPUTTERING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a sputtering method capable of re-adjusting a film thickness distribution without opening a vacuum chamber to the atmosphere.SOLUTION: A method designed to carrying out a cycle in which a region on which magnetic flux acts on moves on the same track from a starting point and returns to the starting point by moving a magnet unit 3 relatively to a target 2 at least once in film deposition includes: an information acquisition process in which the magnet unit is moved at a predetermined reference speed in one cycle to deposit a thin film on a substrate surface and then information associated with a film thickness distribution in the substrate surface is acquired; and a speed determination process in which a track of the magnet unit in the one cycle is sectioned into a plurality of zones, at least one zone is defined as a reference zone, and a quantity of acceleration or deceleration from the reference speed is determined for each of the zones other than the reference zone based upon the acquired information, the film being deposited by moving the magnet unit relatively to the target at a speed of each zone, determined in the speed determination process, in the one cycle.
申请公布号 JP2016011445(A) 申请公布日期 2016.01.21
申请号 JP20140133868 申请日期 2014.06.30
申请人 ULVAC JAPAN LTD 发明人 FUJII YOSHIJI;NAKAMURA SHINYA
分类号 C23C14/35;H01L21/285 主分类号 C23C14/35
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