| 发明名称 |
SUBSTRATE FOR POWER MODULES, SUBSTRATE WITH HEAT SINK FOR POWER MODULES, AND POWER MODULE |
| 摘要 |
The present invention provides a power module substrate including an insulating substrate, a circuit layer which is formed on one surface of the insulating substrate, and a metal layer which is formed on the other surface of the insulating substrate, in which the circuit layer has a first aluminum layer made of aluminum or an aluminum alloy which is bonded to the insulating substrate and a first copper layer made of copper or a copper alloy which is bonded to the first aluminum layer by solid-phase diffusion, the metal layer has a second aluminum layer made of aluminum or an aluminum alloy, and a relationship between a thickness t1 of the circuit layer and a thickness t2 of the second aluminum layer of the metal layer satisfy t1<t2. |
| 申请公布号 |
US2016021729(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201414772155 |
申请日期 |
2014.03.24 |
| 申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
Nagatomo Yoshiyuki;Terasaki Nobuyuki;Kuromitsu Yoshirou |
| 分类号 |
H05K1/02;H05K1/09;H05K1/18 |
主分类号 |
H05K1/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power module substrate comprising:
an insulating substrate; a circuit layer which is formed on one surface of the insulating substrate; and a metal layer which is formed on the other surface of the insulating substrate, wherein the circuit layer has a first aluminum layer made of aluminum or an aluminum alloy which is bonded to the insulating substrate and a first copper layer made of copper or a copper alloy which is bonded to the first aluminum layer by solid-phase diffusion, the metal layer has a second aluminum layer made of aluminum or an aluminum alloy, and a relationship between a thickness t1 of the circuit layer and a thickness t2 of the second aluminum layer of the metal layer satisfy t1<t2. |
| 地址 |
Chiyoda-ku, Tokyo JP |
