发明名称 |
FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF |
摘要 |
Disclosed is a thin film transistor array panel including: a substrate including a display area and a peripheral area; a second semiconductor layer disposed on the substrate, and disposed on a first semiconductor layer disposed in the display area and the peripheral area; and a passivation layer disposed on the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer include an oxide semiconductor, and a thickness of the first semiconductor layer is different from that of the second semiconductor layer. |
申请公布号 |
US2016020230(A1) |
申请公布日期 |
2016.01.21 |
申请号 |
US201414534508 |
申请日期 |
2014.11.06 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Lee Doo Youl;Kwon Hyuk Soon;Kim Jang Soo |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
|
代理人 |
|
主权项 |
1. A thin film transistor array panel comprising:
a substrate including a display area and a peripheral area; a first semiconductor layer disposed in the display area and a second semiconductor layer disposed on the peripheral area; and a passivation layer disposed on the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer include an oxide semiconductor, and wherein a thickness of the first semiconductor layer is different from that of the second semiconductor layer. |
地址 |
Yongin-City KR |