| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
Provided are methods for fabricating semiconductor devices. The methods for fabricating the semiconductor devices may include forming a first interlayer insulation film including a trench on a substrate, forming a high-k layer along an inner sidewall and a bottom surface of the trench, forming a first work function control film including impurities along the high-k layer, removing the impurities from the first work function control film to reduce surface resistance of the first work function control film by about 30% to about 60% and forming a gate metal in the trench. |
| 申请公布号 |
US2016020118(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201514802467 |
申请日期 |
2015.07.17 |
| 申请人 |
PARK Moon-Kyu;KWON Oh-Seong;HAN Sung-Kee;HYUN Sang-Jin |
发明人 |
PARK Moon-Kyu;KWON Oh-Seong;HAN Sung-Kee;HYUN Sang-Jin |
| 分类号 |
H01L21/3215;H01L21/28;H01L29/40 |
主分类号 |
H01L21/3215 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a semiconductor device, the method comprising:
forming a first interlayer insulation film including a trench on a substrate; forming a high-k layer along an inner sidewall and a bottom surface of the trench; forming a first work function control film along the high-k layer, the first work function control film including impurities; at least partially removing the impurities from the first work function control film to reduce surface resistance of the first work function control film by about 30% to about 60%; and forming a gate metal in the trench. |
| 地址 |
Hwaseong-si KR |
