SEMICONDUCTOR STRUCTURE INCLUDING SILICON AND OXYGEN-CONTAINING METAL LAYER AND PROCESS THEREOF

摘要

A metal gate process for polishing and oxidizing includes the following steps. A first dielectric layer having a trench is formed on a substrate. A barrier layer and a metal layer are formed sequentially to cover the trench and the first dielectric layer. A first chemical mechanical polishing process including a slurry of H2O2 with the concentration of 0˜0.5 weight percent (wt. %) is performed to polish the metal layer until the barrier layer on the first dielectric layer is exposed. A second chemical mechanical polishing process including a slurry of H2O2 with the concentration higher than 1 weight percent (wt. %) is performed to polish the barrier layer as well as oxidize a surface of the metal layer remaining in the trench until the first dielectric layer is exposed, thereby a metal oxide layer being formed on the metal layer.

主权项

1. A semiconductor process, comprising:
forming a first dielectric layer having a trench on a substrate; forming a metal gate in the trench; performing a silicon-containing deposition process to import silicon atoms into a top surface of the metal gate, thereby forming a silicon-containing metal layer on the metal gate; and performing a silicon and oxygen-containing deposition process to form a second dielectric layer on the silicon-containing metal layer and the first dielectric layer.