PHASE CHANGE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

A phase change memory device includes a phase change memory unit and a heat sink. The phase change memory unit includes a phase change material layer pattern, a lower electrode beneath the phase change material layer pattern configured to heat the phase change material layer pattern, and an upper electrode on the phase change material layer pattern. The heat sink configured to absorb heat from the phase change memory unit. The heat sink has a top surface lower than a top surface of the upper electrode and is spaced apart from the phase change memory unit.

主权项

1. A method of manufacturing a phase change memory device, the method comprising:
forming a lower electrode on a substrate; forming a heat sink adjacent to and spaced apart from the lower electrode; forming a phase change material layer pattern on the lower electrode; and forming an upper electrode on the phase change material layer pattern; wherein forming the heat sink includes forming the heat sink having a top surface lower than a top surface of the upper electrode.