发明名称 |
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE |
摘要 |
The transistor includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The oxide semiconductor film includes a first oxide semiconductor film on the gate electrode side and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film includes a first region in which an atomic proportion of In is larger than that of M (M is Ti, Ga, Sn, Y, Zr, La, Ce, Nd, or Hf). The second oxide semiconductor film includes a second region in which an atomic proportion of In is smaller than that of the first oxide semiconductor film. The second region includes a portion thinner than the first region. |
申请公布号 |
WO2016009310(A1) |
申请公布日期 |
2016.01.21 |
申请号 |
WO2015IB55187 |
申请日期 |
2015.07.09 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KOEZUKA, JUNICHI;OKAZAKI, KENICHI;KUROSAKI, DAISUKE;SHIMA, YUKINORI;HOSAKA, YASUHARU |
分类号 |
H01L29/786;G02F1/1368;G09F9/30;H01L21/28;H01L21/336;H01L51/50;H05B33/14 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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