| 摘要 |
PROBLEM TO BE SOLVED: To protect a member in a chamber against plasma and to prevent transformation and wear thereof.SOLUTION: A plasma processing method comprises: a film formation step; a plasma processing step; and a removing step. In the film formation step, a silicon oxide film is formed on the surface of a member in a chamber by plasma of an oxygen-containing gas and a silicon-containing gas arranged so that the flow rate ratio of the silicon-containing gas to the oxygen-containing gas is 0.2-1.4. In the plasma processing step, a work loaded into the chamber after the silicon oxide film formation on the surface of the member is processed by plasma of a process gas. In the removing step, the work subjected to the plasma processing is brought out of the chamber and then, the silicon oxide film is removed from the surface of the member by plasma of a fluorine-containing gas. |
