| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which microfabrication is achieved while suppressing defects, and to provide the semiconductor device in which the microfabrication is achieved while keeping favorable characteristics.SOLUTION: A semiconductor device includes: an insulating layer: a source electrode and a drain electrode embedded in the insulating layer; an oxide semiconductor layer partially in contact with a surface of the insulating layer; a surface of the source electrode, and a surface of the drain electrode; a gate insulating layer covering the oxide semiconductor layer; and a gate electrode over the gate insulating layer. In the semiconductor device, a region which is a part of the surface of the insulating layer in contact with the oxide semiconductor layer has root mean square (RMS) roughness of 1 nm or less, and difference in height between the part of the surface of the insulating layer and the surface of the source electrode or difference in height between the part of the surface of the insulating layer and the surface of the drain electrode is less than 5 nm. |
