SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURING METHOD AND LIGHT EMITTING DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device, a semiconductor light emitting device manufacturing method and a light emitting device manufacturing method, which can obtain appropriate color.SOLUTION: According to an embodiment, a semiconductor light emitting device comprises: a semiconductor layer; an n-side electrode and a p-side electrode which are provided on a second principal surface of the semiconductor layer; an insulation film provided on the p-side electrode; n-side wiring; p-side wiring; an n-side metal pillar which is provided on the n-side wiring and thicker than the semiconductor layer; a p-side metal pillar which is provided on the p-side wiring and thicker than the semiconductor layer; a resin which is provided around the n-side metal pillar and around the p-side metal pillar and thicker than the semiconductor layer; a phosphor layer provided on a first principal surface without involving the substrate; and metal films which are provided on lateral faces of the semiconductor layer and extend outward from the lateral faces to be provided between the phosphor layer and the resin. A part of the n-side wiring faces the p-side electrode via the insulation film.