SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS

摘要

Solid-state imaging devices, methods of producing a solid-state imaging device, and electronic apparatuses are provided. More particularly, a solid-state image device (1) includes a silicon substrate (22), and at least a first photodiode (33) formed in the silicon substrate. The device also includes an epitaxial layer (21) with a first surface adjacent a surface of the silicon substrate, and a transfer transistor (31) with a gate electrode (41) that extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface. In further embodiments, a solid-state imaging device with a plurality of pixels formed in a second semiconductor substrate wherein the pixels are symmetrical with respect to a center point is provided. A floating diffusion is formed in an epitaxial layer, and a plurality of transfer gate electrodes that are each electrically connected to the floating diffusion by one of the transfer gate electrodes is provided.

主权项

1. A solid-state imaging device, comprising:
a silicon substrate; at least a first photodiode, wherein the first photodiode is formed in the silicon substrate; an epitaxial layer, wherein a first surface of the epitaxial layer is adjacent a surface of the silicon substrate; a transfer transistor, wherein a gate electrode of the transfer transistor extends from the at least a first photodiode to a second surface of the epitaxial layer opposite the first surface.