NANO STRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

The present invention provides a nanostructure semiconductor light emitting device. According to an aspect of the present invention, the nanostructure semiconductor light emitting device includes: a base layer comprising a first conductive semiconductor; an insulation layer formed on the base layer and having multiple openings in which a partial area of the base layer is exposed; and multiple nano light emitting structures having a nanocore individually formed on each exposed area of the base layer and comprising the first conductive semiconductor, and an active layer and a second conductive semiconductor which are formed on the side of the nanocore in order. The nano light emitting structures are formed in the same growth process and are divided into n groups (n is an integer which is 2 or more) individually having the two or more nano light emitting structures. At least one among a diameter, a height, and a pitch of the nanocore in the each group is different so that the active layer of the each group individually emits the different light.