| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
In a manufacturing method of a semiconductor device according to an embodiment, a mask material comprising at least one layer of a hafnium silicate (HfSiOn (n is a positive number)) film is formed on a processing target film. The processing target material is processed using the mask material as a mask. The hafnium silicate film is located almost at a central portion of the mask material or between the central portion of the mask material and an upper surface thereof. |
| 申请公布号 |
US2016020111(A1) |
申请公布日期 |
2016.01.21 |
| 申请号 |
US201414482349 |
申请日期 |
2014.09.10 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
JIMMA Yuuko |
| 分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A manufacturing method of a semiconductor device, the method comprising:
forming a mask material comprising at least one layer of a hafnium silicate (HfSiOn (n is a positive number)) film on a processing target material; and processing the processing target material using the mask material as a mask, wherein the hafnium silicate film is located almost at a central portion of the mask material or between the central portion of the mask material and an upper surface thereof. |
| 地址 |
Minato-ku JP |
