发明名称 THIN FILM CAPACITOR
摘要 A thin film capacitor including a lower electrode layer, a dielectric layer provided on the lower electrode layer, and an upper electrode layer formed on the dielectric layer, wherein the dielectric layer includes a recessed portion in a portion on the upper face thereof, a cross-sectional structure perpendicular to the dielectric layer of the recessed portion has a cross-sectional taper angle of 1 degree or more and 25 degrees or less, and the distance between the bottom portion center and an outermost portion of the recessed portion is 20 times or more and 150 times or less a thickness of the dielectric layer.
申请公布号 US2016020030(A1) 申请公布日期 2016.01.21
申请号 US201514799247 申请日期 2015.07.14
申请人 TDK CORPORATION 发明人 AOTANI Junji;TANAKA Shigeaki;KURACHI Katsuyuki;NAMIKAWA Tatsuo;ABURAKAWA Yuuki
分类号 H01G4/33;H01G4/06;H01G4/012 主分类号 H01G4/33
代理机构 代理人
主权项 1. A thin film capacitor including a lower electrode layer, a dielectric layer provided on the lower electrode layer, and an upper electrode layer formed on the dielectric layer, wherein the dielectric layer includes a recessed portion in a portion on an upper face thereof, a cross-sectional structure perpendicular to the dielectric layer of the recessed portion has a cross-sectional taper angle of I degree or more and 25 degrees or less, the cross-sectional taper angle being formed by (1) a tangential line that is tangent to a position on an end portion of the recessed portion and at 50% of a maximum depth of the recessed portion, and (2) a line being an interface between a portion other than the recessed portion of the dielectric layer and the upper electrode layer, and a distance between a bottom portion center and an outermost portion of the recessed portion is 20 times or more and 150 times or less a thickness of the dielectric layer.
地址 Tokyo JP