Heterojunction Bipolar Transistor

摘要

A heterojunction bipolar transistor, comprising an elongated base mesa, an elongated base electrode, two elongated emitters, an elongated collector, and two elongated collector electrodes. The elongated base electrode is formed on the base mesa along the long axis of the base mesa, and the base electrode has a base via hole at or near the center of the base electrode. The two elongated emitter are formed on the base mesa respectively at two opposite sides of the base electrode, and each of two emitters has an elongated emitter electrode formed on the emitter. The elongated collector is formed below the base mesa. The two elongated collector electrodes are formed on the collector respectively at two opposite sides of the base mesa.

主权项

1. A heterojunction bipolar transistor, comprising:
an elongated base mesa having a long axis and a short axis; an elongated base electrode having a long axis and a short axis, formed on the base mesa with the long axis of the base electrode essentially parallel to the long axis of the base mesa, and the base electrode having a base via hole at or near the center of the base electrode; two elongated emitters formed on the base mesa respectively at two opposite sides of the base electrode along the long axis of the base electrode, each emitter having an elongated emitter electrode formed on the emitter; an elongated collector formed below the base mesa; and two elongated collector electrodes formed on the collector respectively at two opposite sides of the base mesa along the long axis of the base mesa.